The IEEE PEAC 2022 Online Conference System
TE6-2: Power Devices and applications: Si, SiC, and GaN devices--Ⅰ(VooV)
352
Theme:TE6-2: Power Devices and applications: Si, SiC, and GaN devices--Ⅰ
Meeting Time:2022-11-06 13:00-15:20 (GMT+08:00) China Standard Time - Beijing
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Session Chairs
Zhicong Huang South China University of Technology
Yun Zhang Tianjin University
 
13:00-13:20
TE6.2.1 Dynamic RDS(on)Testing for GaN Devices Considering Third Quadrant and Different Operating Conditions

13:20-13:40
TE6.2.2 Design Optimization and Experimental Validation of Gate Driver for 10kV SiC MOSFET

13:40-14:00
TE6.2.3 Experimental and Numerical Investigation of Low Melting Point Alloy for Downhole Electronics at High Temperature

14:00-14:20
TE6.2.4 The Benefits of SiC/GaN Devices in T-Type Three-Level Inverter Hybrid Applications

14:20-14:40
TE6.2.5 PZT-Based Mitigation of Voltage Overshooting and Switching Oscillation for SiC MOSFET

14:40-15:00
TE6.2.6 Comparative Analysis on Switching Characteristics of Discrete SiC MOSFET in Press-pack Package and Wire-bonded Package

15:00-15:20
TE6.2.7 Thermal Optimization of a Logging Tool Used in High Temperature Downhole Environment

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