The IEEE PEAC 2022 Online Conference System
TE7-4: Power Devices and applications: Si, SiC, and GaN devices--Ⅱ(VooV)
Theme:TE7-4: Power Devices and applications: Si, SiC, and GaN devices--Ⅱ
Meeting Time:2022-11-07 8:00-10:00 (GMT+08:00) China Standard Time - Beijing
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#Tencent Conference:773-525-020

Session Chairs
Lei Ming Hebei University of Technology
Zhen Xin Hebei University of Technology
TE7.4.1 Current Uniformity Optimization of Multi-Chip SiC Module for High-Power Applications

TE7.4.2 A Novel Electric Field Coupling Differential Probe with Low Intrusion

TE7.4.3 A Fast and Accurate Spice Circuit Simulation Modeling Method of GaN HEMT

TE7.4.4 Research on Fast Design Method for Power Module Terminal RMS Current Capacity via Thermal Equivalent Model

TE7.4.5 Voltage-Balanced Behavioral Model Considering Carrier Extraction Effect for Series-Connected Trench Gate FS-IGBTs

TE7.4.6 Quasi-constant Current Control Method of Resonant Gate Driver for Switching speed Adjustment

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