The IEEE PEAC 2022 Online Conference System
TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ(VooV)
Theme:TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ
Meeting Time:2022-11-07 13:00-15:00 (GMT+08:00) China Standard Time - Beijing
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#Tencent Conference:649-879-767

Session Chairs
Lei Ming Hebei University of Technology
Shanshan Gao Harbin Institute of Technology
TE7.16.1 Modeling and Assessment of Thermal Impedance Considering Layout and Parameter Dispersion for Multichip SiC Power Module

TE7.16.2 IGBT Long-Term Forward Bias Safe Operating Area Calibration Considering Aging-Caused Shrinkage

TE7.16.3 Investigations on the Degradation of Different Gate Oxide Regions of SiC MOSFET Under Different Repetitive DC Bus Voltage

TE7.16.4 Modeling and Stability Analysis for a Closed Loop Active IGBT Gate Drive

TE7.16.5 Trajectory-Model-Based Switching Waveform Restoration Method for Accurate Dynamic Characterization of SiC Power MOSFET

TE7.16.6 Stability Analysis and Parameters Design of DC Microgrid Based on SOC Droop Control

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