The IEEE PEAC 2022 Online Conference System
TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ(VooV)
300
Theme:TE7-16: Power Devices and applications: Si, SiC, and GaN devices--Ⅲ
Meeting Time:2022-11-07 13:00-15:00 (GMT+08:00) China Standard Time - Beijing
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https://meeting.tencent.com/dm/ub6fa8RmY7eD
#Tencent Conference:649-879-767

Session Chairs
Lei Ming Hebei University of Technology
Shanshan Gao Harbin Institute of Technology
 
13:00-13:20
TE7.16.1 Modeling and Assessment of Thermal Impedance Considering Layout and Parameter Dispersion for Multichip SiC Power Module

13:20-13:40
TE7.16.2 IGBT Long-Term Forward Bias Safe Operating Area Calibration Considering Aging-Caused Shrinkage

13:40-14:00
TE7.16.3 Investigations on the Degradation of Different Gate Oxide Regions of SiC MOSFET Under Different Repetitive DC Bus Voltage

14:00-14:20
TE7.16.4 Modeling and Stability Analysis for a Closed Loop Active IGBT Gate Drive

14:20-14:40
TE7.16.5 Trajectory-Model-Based Switching Waveform Restoration Method for Accurate Dynamic Characterization of SiC Power MOSFET

14:40-15:00
TE7.16.6 Stability Analysis and Parameters Design of DC Microgrid Based on SOC Droop Control

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