TE6-2: Power Devices and applications: Si, SiC, and GaN devices--Ⅰ（VooV）
434
Theme：TE6-2: Power Devices and applications: Si, SiC, and GaN devices--ⅠMeeting Time：2022-11-06 13:00-15:20 (GMT+08:00) China Standard Time - Beijing
Click the link to join, or add to the meeting list：
https://meeting.tencent.com/dm/LCMish6XNGFI#Tencent Conference：639-984-054
Session Chairs：
Zhicong Huang South China University of Technology
Yun Zhang Tianjin University
13:00-13:20
TE6.2.1 Dynamic RDS(on)Testing for GaN Devices Considering Third Quadrant and Different Operating Conditions
13:20-13:40
TE6.2.2 Design Optimization and Experimental Validation of Gate Driver for 10kV SiC MOSFET
13:40-14:00
TE6.2.3 Experimental and Numerical Investigation of Low Melting Point Alloy for Downhole Electronics at High Temperature
14:00-14:20
TE6.2.4 The Benefits of SiC/GaN Devices in T-Type Three-Level Inverter Hybrid Applications
14:20-14:40
TE6.2.5 PZT-Based Mitigation of Voltage Overshooting and Switching Oscillation for SiC MOSFET
14:40-15:00
TE6.2.6 Comparative Analysis on Switching Characteristics of Discrete SiC MOSFET in Press-pack Package and Wire-bonded Package
15:00-15:20
TE6.2.7 Thermal Optimization of a Logging Tool Used in High Temperature Downhole Environment
