TE7-4: Power Devices and applications: Si, SiC, and GaN devices--Ⅱ（VooV）
400
Theme：TE7-4: Power Devices and applications: Si, SiC, and GaN devices--ⅡMeeting Time：2022-11-07 8:00-10:00 (GMT+08:00) China Standard Time - Beijing
Click the link to join, or add to the meeting list：
https://meeting.tencent.com/dm/8q788Q3XKWdC#Tencent Conference：773-525-020
Session Chairs：
Lei Ming Hebei University of Technology
Zhen Xin Hebei University of Technology
08:00-08:20
TE7.4.1 Current Uniformity Optimization of Multi-Chip SiC Module for High-Power Applications
08:20-08:40
TE7.4.2 A Novel Electric Field Coupling Differential Probe with Low Intrusion
08:40-09:00
TE7.4.3 A Fast and Accurate Spice Circuit Simulation Modeling Method of GaN HEMT
09:00-09:20
TE7.4.4 Research on Fast Design Method for Power Module Terminal RMS Current Capacity via Thermal Equivalent Model
09:20-09:40
TE7.4.5 Voltage-Balanced Behavioral Model Considering Carrier Extraction Effect for Series-Connected Trench Gate FS-IGBTs
09:40-10:00
TE7.4.6 Quasi-constant Current Control Method of Resonant Gate Driver for Switching speed Adjustment
